to-220 -3l plastic-encapsulate mosfets IRF730 mosfet( n-channel ) features z dynamic dv/dt rating z repetitive avalanche rated z fast switching z ease of paralleling z simple drive requirement description third generation hexfets from internation rectifier provide the designer with the best combination of fast switching ,ruggedized device design,low on-resistance and cost effectiveness. the to-220 package is universally pr eferred for all commercial-industrial applications. the low thermal resistan ce and low package cost of the to-220 contribute to its wide accept ance throughout the industry. maximum ratings(t a =25 unless otherwise noted ) symbol parameter value units 5.5 a i d continuous drain current, v gs @ 10 v t c =25 t c =100 3.5 a i dm pulsed drain current (note 1 ) 22 a p d power dissipation 2 w v gs gate-souse voltage 20 v e as single pulse avalanche energy (note 2 ) 290 mj i ar avalanche current (note 1 ) 5.5 a e ar repetitive avalanche ener gy (note 1 ) 7.4 mj dv/dt peak diode recovery dv/dt (note 3 ) 4.0 v/ns r ja thermal resistance from junction to ambient 62.5 /w t j junction temperature 150 t stg storage temperature -55~+150 to-220 -3l 1. gate 2. drain 3. sour ce 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,jan,2014
electrical characteristics (t a =25 unless otherwise specified) parameter symbol test f onditions min typ max unit drain-source breakdown voltage v (br)dss v gs =0v,i d =250a 400 gate-threshold voltage v (gs) th v ds =v gs , i d =250a 2 4 v gate-body leakage l gss v ds =0v, v gs =20v 100 na v ds =400v, v gs =0v 25 zero gate voltage drain current i dss v ds =320v,v gs =0v,t j =125 250 a drain-source on-resistance (note 4 ) r ds( r n ) v gs =10v, i d =3.3a 1.0
forward transconductance (note 4 ) g fs v ds =50v, i d =3.3a 2.9 s diode forward voltage v sd i s =5.5a, v gs =0v 1.6 v total gate charge q g 38 gate-source charge q gs 5.7 gate-drain charge q gd v ds =320v, v gs =10v,i d =3.5a 22 nc input capacitance (note 5 ) c iss 700 output capacitance (note 5 ) c oss 170 reverse transfer capacitance (note 5 ) c rss v ds =25v, v gs =0v,f=1mhz 64 pf turn-on time(note 4 ,5) t d( o n) 10 rise tme(note 4,5 ) t r 15 turn-off tme(note 4,5 ) t d(off) 38 fall time(note 4 ,5) t f v dd =200v,r d =57
, i d =3.5a, r g =12
14 ns notes: 1. repetitive rating ;pulse width limit ed by maximum junction temperature. 2. l=16mh, i as =5.5a, v dd =50v, r g =25
, starting t j = 25 . 3. i sd ? 5.5a, di/dt ? 90a/s, v dd ? v (br)dss , t j ? 150 . 4. pulse width ? 300s, duty cycle ? 2%. 5. these parameters have no way to verify. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,jan,2014
01234567 0.0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 0 1 2 3 4 5 0.0 0.4 0.8 1.2 1.6 0.01 0.1 1 345678910 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 v ds =10v pulsed drain current i d (a) gate to source voltage v gs (v) transfer characteristics t a =100 t a =25 i d =250ua threshold voltage threshold voltage v th (v) junction temperature t j ( ) 5.5 pulsed source current i s (a) source to drain voltage v sd (v) v sd i s ?? t a =100 t a =25 pulsed i d =3.3a r ds(on) ?? v gs on-resistance r ds(on) ( ) gate to source voltage v gs (v) t a =100 t a =25 t a =25 pulsed on-resistance r ds(on) ( ) drain current i d (a) i d ?? r ds(on) v gs =10v v gs =5.5v pulsed IRF730 output characteristics drain current i d (a) drain to source voltage v ds (v) v gs = 6v 10v v gs =5v v gs =4.5v 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,jan,2014
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